2N3055 Datasheet Explained for Easy Reference
Before noting specific figures, readers should first become famliar with the various terminologies used on the 2N3055 spec sheet. The study of the following relevant acronyms is a must for all electronic students:
VCEO = Indicates the Collector to Emitter Breakdown voltage of the particular device, or the maximum threshold voltage level beyond which the device may get damaged or blown off. In simple words for a given device, the operations must be carried out and limited below these specified levels.
VCBO = As above, it’s the device’s Collector to Base breakdown voltage.
VEBO = It’s the Emitter to Base breakdown voltage.
hFE = DC Forward Current Gain or the efficiency of the device to amplify a given signal to appreciable limits at the collector with respect to relatively lower base biasing voltages.
IC = Collector biasing current
fT = Transition frequency or the maximum frequency rate at which the device would operate optimally.
RƟjc = Thermal withstanding capacity from the case junction, or the maximum allowable case temperature for the device, above which the device might go through a thermal run-away situation to become permanently damaged. The parameter provides the necessary data regarding the heatsink calculations for a particularly device.
PTC = Maximum allowable dissipation (heat) from the case at 25 degrees ambient temperature. Again, it’s the information through which the heatsink parameters may be calculated.
The following data provides the actual figures involved with the various 2N3055 specifications:
Polarity = NPN,
IC = 15 Amp.
VCEO = 60 Volts,
hFE = 20 (min), 70 (max) @ IC = 4 Amp, and VCE = 4 Volts,
Safe Operating Area = 2.87 Amp × 40 V for 1 second pulse.
fT = 2.5 MHz (min),
RƟjc = 1.52 degree C/W,
PTC = 115 Watts.
Now let’s study some of the important and interesting practical operations associated with 2N3055 transistors.